MT45W4MW16B Description
ADVANCE‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM.
MT45W4MW16B Key Features
- Single device supports asynchronous, page, and burst operations
- VCC, VCCQ Voltages 1.70V-1.95V VCC 1.70V-2.25V VCCQ (Option W)
- Random Access Time: 70ns
- Burst Mode Write Access Continuous burst
- Page Mode Read Access Sixteen-word page size Interpage read access: 70ns Intrapage read access: 20ns
- Low-Power Features Temperature pensated Refresh (TCR) Partial Array Refresh (PAR) Deep Power-Down (DPD) Mode
- VCC Core Voltage Supply: 1.80V
- MT45WxMx16BFB
- VCCQ I/O Voltage 3.0V
- MT45WxML16BFB 2.5V