MT45W4MW16BFB
Overview
- Single device supports asynchronous, page, and burst operations
- VCC, VCCQ Voltages 1.70V-1.95V VCC 1.70V-2.25V VCCQ (Option W)
- Random Access Time: 70ns
- Burst Mode Write Access Continuous burst
- Burst Mode Read Access 4, 8, or 16 words, or continuous burst MAX clock rate: 104 MHz (tCLK = 9.62ns) Burst initial latency: 39ns (4 clocks) @ 104 MHz t ACLK: 6.5ns @ 104 MHz
- Page Mode Read Access Sixteen-word page size Interpage read access: 70ns Intrapage read access: 20ns
- Low Power Consumption Asynchronous READ < 25mA Intrapage READ < 15mA Initial access, burst READ: (39ns [4 clocks] @ 104 MHz) < 35mA Continuous burst READ < 15mA Standby: 90µA (32Mb), 100µA (64Mb) Deep power-down < 10µA
- Low-Power Features Temperature Compensated Refresh (TCR) Partial Array Refresh (PAR) Deep Power-Down (DPD) Mode Options
- VCC Core Voltage Supply: 1.80V - MT45WxMx16BFB
- VCCQ I/O Voltage 3.0V - MT45WxML16BFB 2.5V - MT45WxMV16BFB 1.8V - MT45WxMW16BFB
