MT45W4MW16PFA Description
Micron CellularRAM products are high-speed, CMOS dynamic random access memories that have been developed for low-power portable applications. These devices include the industry-standard, asynchronous memory interface found on other low-power SRAM or Pseudo SRAM offerings. Operating voltages have been reduced in an effort to minimize power consumption.
MT45W4MW16PFA Key Features
- Asynchronous and Page Mode interface
- Random Access Time: 70ns, 85ns
- Page Mode Read Access Sixteen-word page size Interpage read access: 70ns, 85ns Intrapage read access: 20ns, 25ns
- Low Power Consumption Asynchronous READ < 25mA Intrapage READ < 15mA Standby: 90µA (32Mb), 100µA (64Mb) Deep Power-Down
- Low-Power Features Temperature pensated Refresh (TCR) Partial Array Refresh (PAR) Deep Power-Down (DPD) Mode
- VCC Core Voltage Supply 1.8V
- MT45WxMx16PFA
- VCCQ I/O Voltage 3.0V
- MT45WxML16PFA 2.5V
- MT45WxMV16PFA 1.8V