MT58L128L18P Overview
None MT58L128L18PT-10 The Micron® SyncBurst™ SRAM family employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. Micron’s 2Mb SyncBurst SRAMs integrate a 128K x 18, 64K x 32, or 64K x 36 SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counter. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input...
MT58L128L18P Key Features
- Fast clock and OE# access times
- Single +3.3V +0.3V/-0.165V power supply (VDD)
- Separate +3.3V or +2.5V isolated output buffer supply (VDDQ)
- SNOOZE MODE for reduced-power standby
- Single-cycle deselect (Pentium® BSRAM-patible)
- mon data inputs and data outputs
- Individual BYTE WRITE control and GLOBAL WRITE
- Three chip enables for simple depth expansion and address pipelining
- Clock-controlled and registered addresses, data I/Os and control signals
- Internally self-timed WRITE cycle