46V16M8 Overview
x4, x8, x16 DDR SDRAM DOUBLE DATA RATE (DDR) SDRAM.
46V16M8 Key Features
- VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V
- Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data .. capture (x16 has two
- one per byte)
- Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle
- Differential clock inputs (CK and CK#)
- mands entered on each positive CK edge
- DQS edge-aligned with data for READs; centeraligned with data for WRITEs
- DLL to align DQ and DQS transitions with CK
- Four internal banks for concurrent operation
- Data mask (DM) for masking write data (x16 has two