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MT28EW01GABA - Parallel NOR Flash Embedded Memory

Features

  • Parallel NOR Flash Embedded Memory MT28EW01GABA Features.
  • Single-level cell (SLC) process technology.
  • Density: 1Gb.
  • Supply voltage.
  • VCC = 2.7.
  • 3.6V (program, erase, read).
  • VCCQ = 1.65 - VCC (I/O buffers).
  • Asynchronous random/page read.
  • Page size: 16 words or 32 bytes.
  • Page access: 20ns.
  • Random access: 95ns (VCC = VCCQ = 2.7-3.6V).
  • Random access: 100ns (VCCQ = 1.65-VCC).
  • Buffer program (512-.

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Datasheet Details

Part number MT28EW01GABA
Manufacturer Micron Technology
File Size 968.44 KB
Description Parallel NOR Flash Embedded Memory
Datasheet download datasheet MT28EW01GABA Datasheet
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1Gb: x8/x16, 3V, MT28EW Embedded Parallel NOR Features Parallel NOR Flash Embedded Memory MT28EW01GABA Features • Single-level cell (SLC) process technology • Density: 1Gb • Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65 - VCC (I/O buffers) • Asynchronous random/page read – Page size: 16 words or 32 bytes – Page access: 20ns – Random access: 95ns (VCC = VCCQ = 2.7-3.6V) – Random access: 100ns (VCCQ = 1.65-VCC) • Buffer program (512-word program buffer) – 2.0 MB/s (TYP) when using full buffer program – 2.5 MB/s (TYP) when using accelerated buffer program (VHH) • Word/Byte program: 25us per word (TYP) • Block erase (128KB): 0.
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