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MT28EW128ABA - Parallel NOR Flash Embedded Memory

Description

8 Signal Assignments 9 Signal Descriptions 12 Memory Organization 14 Memory Configuration 14 Memory Map 14 Bus Operations 15 Read

Features

  • Parallel NOR Flash Embedded Memory MT28EW128ABA Features.
  • Single-level cell (SLC) process technology.
  • Density: 128Mb.
  • Supply voltage.
  • VCC = 2.7.
  • 3.6V (program, erase, read).
  • VCCQ = 1.65 - VCC (I/O buffers).
  • Asynchronous random/page read.
  • Page size: 16 words or 32 bytes.
  • Page access: 20ns.
  • Random access: 70ns (VCC = VCCQ = 2.7-3.6V).
  • Random access: 75ns (VCCQ = 1.65-VCC).
  • Buffer program (512.

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Datasheet Details

Part number MT28EW128ABA
Manufacturer Micron Technology
File Size 1.06 MB
Description Parallel NOR Flash Embedded Memory
Datasheet download datasheet MT28EW128ABA Datasheet
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128Mb: x8/x16, 3V, MT28EW Embedded Parallel NOR Features Parallel NOR Flash Embedded Memory MT28EW128ABA Features • Single-level cell (SLC) process technology • Density: 128Mb • Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65 - VCC (I/O buffers) • Asynchronous random/page read – Page size: 16 words or 32 bytes – Page access: 20ns – Random access: 70ns (VCC = VCCQ = 2.7-3.6V) – Random access: 75ns (VCCQ = 1.65-VCC) • Buffer program (512-word program buffer) – 2.0 MB/s (TYP) when using full buffer program – 2.5 MB/s (TYP) when using accelerated buffer program (VHH) • Word/Byte program: 25us per word (TYP) • Block erase (128KB): 0.
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