MT28EW128ABA
MT28EW128ABA is Parallel NOR Flash Embedded Memory manufactured by Micron Technology.
Features
Parallel NOR Flash Embedded Memory
Features
- Single-level cell (SLC) process technology
- Density: 128Mb
- Supply voltage
- VCC = 2.7- 3.6V (program, erase, read)
- VCCQ = 1.65
- VCC (I/O buffers)
- Asynchronous random/page read
- Page size: 16 words or 32 bytes
- Page access: 20ns
- Random access: 70ns (VCC = VCCQ = 2.7-3.6V)
- Random access: 75ns (VCCQ = 1.65-VCC)
- Buffer program (512-word program buffer)
- 2.0 MB/s (TYP) when using full buffer program
- 2.5 MB/s (TYP) when using accelerated buffer program (VHH)
- Word/Byte program: 25us per word (TYP)
- Block erase (128KB): 0.2s (TYP)
- Memory organization
- Uniform blocks: 128KB or 64KW each
- x8/x16 data bus
- Program/erase suspend and resume capability
- Read from another block during a PROGRAM
SUSPEND operation
- Read or program another block during an ERASE
SUSPEND operation
- Unlock bypass, block erase, chip erase, and write to buffer capability
- BLANK CHECK operation to verify an erased block
- CYCLIC REDUNDANCY CHECK (CRC) operation to verify a program pattern
- VPP/WP# protection
- Protects first or last block regardless of block protection settings
- Software protection
- Volatile protection
- Nonvolatile protection
- Password protection
- Extended memory block
- 128-word (256-byte) block for permanent, secure identification
- Programmed or locked at the factory or by the customer
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