MT28F016S5 Datasheet | Micron Technology

FEATURES - Thirty-two 64KB erase blocks - Deep Power-Down Mode: 10µA MAX - Smart 5 technology: 5V ±10% VCC 5V ±10% VPP application/production programming 12V VPP tolerant patibility production programming - Address access time: 90ns - Industry-standard pinouts - Inputs and outputs are fully TTL-patible - Automated write and erase algorithm - Two-cycle WRITE/ERASE sequence 5V Only, Dual Supply (Smart 5) PIN ASSIGNMENT (Top View) 40-Pin TSOP Type I OPTIONS - Timing 90ns access MARKING -9 - Package Plastic 40-pin TSOP Type 1 (10mm x 20mm) Part Number Example: A19 A18 A17 A16 A15 A14 A13 A12 CE# VCC VPP RP# A11 A10 . A9 A8 A7 A6 A5 VG A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 A20 NC WE# OE# RY/BY# DQ7 DQ6 DQ5 DQ4 VCC VSS VSS DQ3 DQ2 DQ1 DQ0 A0 A1 A2 A3 Data Shee MT28F016S5VG-9 GENERAL DESCRIPTION The MT28F016S5 is a nonvolatile, electrically blockerasable (flash), programmable, read-only memory containing 2,097,152 bytes (8 bits). Writing or erasing the device is done with a 5V VPP voltage, while all operations are performed with a 5V VCC. Due to process technology advances, 5V VPP is optimal for application and production programming. For backward patibility with Smart Voltage technology, 12V VPP is supported for a maximum of 100 cycles and may be connected for up to 100 cumulative hours. The device is fabricated with Micron’s advanced CMOS floatinggate process. . 2 Meg x 8 Smart 5 Even-Sectored Flash Memory F42.p65 - Rev. 1/00 The MT28F016S5 is organized into 32 separately erasable blocks. ERASEs may be interrupted to allow other operations with the ERASE SUSPEND mand. After the ERASE SUSPEND mand is issued, READ operations may be executed. Operations are executed with mands from an industry-standard mand set. In addition to status register polling, the MT28F016S5 provides a ready/ busy# (RY/BY#) output to indicate WRITE and ERASE pletion. Please refer to Micron’s Web site...