MT28F800B3 Overview
Key Specifications
Package: TFSOP
Operating Voltage: 3.3 V
Max Voltage (typical range): 3.6 V
Min Voltage (typical range): 3 V
Description
MT28F008B3 MT28F800B3 T B None ET VG WG SG The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a VPP voltage of either 3.3V or 5V, while all operations are performed with a 3.3V VCC.
Key Features
- Eleven erase blocks: 40-Pin 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Eight main memory blocks
- Smart 3 technology (B3): 3.3V ±0.3V VCC 3.3V ±0.3V VPP application programming 5V ±10% VPP application/production programming1
- Compatible with 0.3µm Smart 3 device
- Advanced 0.18µm CMOS floating-gate process
- Address access time: 90ns
