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MT46V4M32 Datasheet Double Data Rate Ddr Sdram

Manufacturer: Micron Technology

Overview: m o .c U 4 DOUBLE eDATA RATE et h (DDR) S SDRAM a t a D .

Key Features

  • w w w.
  • VDD = +2.5V ±0.125V, VDDQ = +2.5V ±0.125V.
  • Bidirectional data strobe (DQS) transmitted/ received with data, i. e. , source-synchronous data capture.
  • Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle.
  • Reduced output drive option.
  • Differential clock inputs (CK and CK#).
  • Commands entered on each positive CK edge.
  • DQS edge-aligned with data for READs; centeraligned with data for WRITEs.

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