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MT46V8M16 - (MT46Vxxx) DOUBLE DATA RATE DDR SDRAM

Download the MT46V8M16 datasheet PDF. This datasheet also covers the MT46V16M8 variant, as both devices belong to the same (mt46vxxx) double data rate ddr sdram family and are provided as variant models within a single manufacturer datasheet.

Description

The 128Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits.

It is internally configured as a quad-bank DRAM.

The 128Mb DDR SDRAM uses a double data rate architecture to achieve high-speed operation.

Features

  • c . U 4 t Double Data Rate (DDR) SDRAM e e8 Meg x 4 x 4 Banks MT46V32M4h.
  • S.
  • 4 Meg x 8 x 4 Banks MT46V16M8 a MT46V8M16 at.
  • 2 Meg x 16 x 4 Banks . D w w Features Options Marking w For the latest data sheet revisions, please refer to the Micron Web site: www. micron. com/sdram.
  • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V.
  • VDD = +2.6V ±0.1V, VDDQ = +2.6V ±0.1V (DDR 400).
  • Bidirectional data strobe (DQS) transmitted/ received with data, i. e. , source-synch.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT46V16M8_MicronTechnology.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Micron Technology

Part Number Description
MT46V128M4 Double Data Rate (DDR) SDRAM
MT46V128M8 DDR SDRAM
MT46V16M16 Double Data Rate (DDR) SDRAM
MT46V16M8 (MT46Vxxx) DOUBLE DATA RATE DDR SDRAM
MT46V256M4 DDR SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
m 128Mb: x4, x8, x16 DDR SDRAM o Features c . U 4 t Double Data Rate (DDR) SDRAM e e8 Meg x 4 x 4 Banks MT46V32M4h – S – 4 Meg x 8 x 4 Banks MT46V16M8 a MT46V8M16 at – 2 Meg x 16 x 4 Banks .D w w Features Options Marking w For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/sdram • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • VDD = +2.6V ±0.1V, VDDQ = +2.6V ±0.1V (DDR 400) • Bidirectional data strobe (DQS) transmitted/ received with data, i.e.
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