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MT48H4M16LF - Mobile SDRAM

Description

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Features

  • Mobile SDRAM MT48H4M16LF.
  • 1 Meg x 16 x 4 banks Features.
  • 1.70.
  • 1.95V.
  • Fully synchronous; all signals registered on positive edge of system clock.
  • Internal pipelined operation; column address can be changed every clock cycle.
  • Internal banks for hiding row access/precharge.
  • Programmable burst lengths: 1, 2, 4, 8, or continuous page1.
  • Auto precharge, includes concurrent auto precharge.
  • Self refresh mode.
  • 64ms,.

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Full PDF Text Transcription

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64Mb: 4 Meg x 16 Mobile SDRAM Features Mobile SDRAM MT48H4M16LF – 1 Meg x 16 x 4 banks Features • 1.70–1.95V • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/precharge • Programmable burst lengths: 1, 2, 4, 8, or continuous page1 • Auto precharge, includes concurrent auto precharge • Self refresh mode • 64ms, 4,096-cycle refresh • LVTTL-compatible inputs and outputs • Partial-array self refresh (PASR) power-saving mode • On-die temperature-compensated self refresh (TCSR) • Deep power-down (DPD) mode • Programmable output drive strength • Operating temperature ranges – Commercial (0°C to +70°C) – Industrial (–40°C to +85°C) Notes: 1.
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