MT4LC4M16F5
Description
The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits organized in a x16 configuration.
Key Features
- Single +3.3V ±0.3V power supply
- Industry-standard x16 pinout, timing, functions, and packages
- 12 row, 10 column addresses
- High-performance CMOS silicon-gate process
- FAST PAGE MODE (FPM) access
- 4,096-cycle CAS#-BEFORE-RAS# (CBR) REFRESH distributed across 64ms
- Plastic Package 50-pin TSOP (400 mil)
- Timing 50ns access 60ns access
- Refresh Rate Standard Refresh
- The # symbol indicates signal is active LOW
