MT4LC4M16N3
Description
The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V.
Key Features
- Single +3.3V ±0.3V power supply
- Industry-standard x16 pinout, timing, functions, and package
- High-performance CMOS silicon-gate process
- Extended Data-Out (EDO) PAGE MODE access
- 4,096-cycle CAS#-BEFORE-RAS# (CBR) REFRESH distributed across 64ms
- Optional self refresh (S) for low-power data retention
- Plastic Package 50-pin TSOP (400 mil)
- Timing 50ns access 60ns access
- Refresh Rates 4K 8K Standard Refresh Self Refresh
- Operating Temperature Range mercial (0°C to +70°C)
