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MT53B1024M32D4 - Mobile LPDDR4 SDRAM

Download the MT53B1024M32D4 datasheet PDF. This datasheet also covers the MT53B256M32D1 variant, as both devices belong to the same mobile lpddr4 sdram family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Mobile LPDDR4 SDRAM MT53B256M32D1, MT53B512M32D2, MT53B1024M32D4 Features.
  • Ultra-low-voltage core and I/O power supplies.
  • VDD1 = 1.70.
  • 1.95V; 1.8V nominal.
  • VDD2/VDDQ = 1.06.
  • 1.17V; 1.10V nominal.
  • Frequency range.
  • 1600.
  • 10 MHz (data rate range: 3200.
  • 20 Mb/s/ pin).
  • 16n prefetch DDR architecture.
  • 2-channel partitioned architecture for low RD/WR energy and low average latency.
  • 8 internal banks per.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT53B256M32D1-Micron.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Micron Confidential and Proprietary Preliminary‡ 200b: x32 Mobile LPDDR4 SDRAM Features Mobile LPDDR4 SDRAM MT53B256M32D1, MT53B512M32D2, MT53B1024M32D4 Features • Ultra-low-voltage core and I/O power supplies – VDD1 = 1.70–1.95V; 1.8V nominal – VDD2/VDDQ = 1.06–1.17V; 1.