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2N1613L - NPN LOW POWER SILICON TRANSISTOR

Download the 2N1613L datasheet PDF. This datasheet also covers the 2N1613 variant, as both devices belong to the same npn low power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N1613_MicrosemiCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2N1613L NPN Low Power Silicon Transistor VPT
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2N1613 NPN Small Signal General Purpose Amplifiers Fairchild
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Other Datasheets by Microsemi (now Microchip Technology)

Part Number Description
2N1613 NPN LOW POWER SILICON TRANSISTOR
2N1479 NPN SILICON MEDIUM POWER TRANSISTOR
2N1480 NPN SILICON MEDIUM POWER TRANSISTOR
2N1481 NPN SILICON MEDIUM POWER TRANSISTOR
2N1482 NPN SILICON MEDIUM POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/181 Devices 2N718A 2N1613 2N1613L Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C (1) Symbol VCEO VCBO VEBO IC Value 30 75 7.0 500 0.5 0.8 1.8 3.0 -55 to +175 Max. Unit Vdc Vdc Vdc mAdc TO-18 (TO-206AA)* 2N718A 2N718A 2N1613, L @ TC = +250C (2) 2N718A 2N1613, L Operating & Storage Junction Temperature Range PT W TJ, Tstg Symbol 0 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Unit 0 2N718A 97 C/W RθJC 2N1613, L 58 1) Derate linearly 4.57 mW/0C for 2N1613, L and 2.85 mW/0C for 2N718A for TA > +250C 2) Derate linearly 17.