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2N1613L - NPN Low Power Silicon Transistor

Download the 2N1613L datasheet PDF. This datasheet also covers the 2N1613 variant, as both devices belong to the same npn low power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Available in JAN, JANTX and JANTXV per MIL-PRF-19500/181.
  • Available in TO-18 (2N718A), TO-39 (2N1613) and TO-5 (2N1613L) packages.
  • Designed for Small Signal General Purpose Switching.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N1613-VPT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N1613L
Manufacturer VPT
File Size 696.33 KB
Description NPN Low Power Silicon Transistor
Datasheet download datasheet 2N1613L Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2N1613L NPN LOW POWER SILICON TRANSISTOR Microsemi Corporation
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2N1613 SWITCHES AND UNIVERSAL AMPLIFIERS STMicroelectronics
2N1613 NPN Small Signal General Purpose Amplifiers Fairchild
2N1613 NPN LOW POWER SILICON TRANSISTOR Microsemi Corporation

Other Datasheets by VPT

Part Number Description
2N1613 NPN Low Power Silicon Transistor
2N1479 NPN Medium Power Silicon Transistor
2N1479S NPN Medium Power Silicon Transistor
2N1480 NPN Medium Power Silicon Transistor
2N1480S NPN Medium Power Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N718A, 2N1613, 2N1613L NPN Low Power Silicon Transistor Features • Available in JAN, JANTX and JANTXV per MIL-PRF-19500/181 • Available in TO-18 (2N718A), TO-39 (2N1613) and TO-5 (2N1613L) packages • Designed for Small Signal General Purpose Switching Applications. Electrical Characteristics (TA = +25oC unless otherwise specified) Rev. V1 Parameter Test Conditions Symbol Units Min. Max. Breakdown Voltage, Collector - Emitter IC = 100 µA dc V(BR)CEO V dc 30 — Collector - Base Cutoff Current VCBO = 75 V dc ICBO1 µA dc — 10 Emitter - Base Cutoff Current VEBO = 7.0 V dc IEBO1 µA dc — 10 Collector-Emitter Breakdown Voltage IC= 100 µA dc; RBE = 10 Ω V(BR)CER V dc 50 — Emitter - Base Cutoff Current Collector - Base Cutoff Current VEB = 5.