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TECHNICAL DATA
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/423 Devices 2N5581 2N5582 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation
Symbol
VCEO VCBO VEBO IC PT Top, Tstg
Value
50 75 6.0 800 0.5 2.0 -55 to +200
Unit
Vdc Vdc Vdc mAdc W W 0 C
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@ TA = 250C (1) @ TC = 250C (2) Operating & Storage Junction Temperature Range 1) Derate linearly 2.86 mW/0C for TA > 250C 2) Derate linearly 11.43 mW/0C for TC > 250C
TO-46* (TO-206AB)
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol V(BR)CEO ICBO Min. 50 10 10 10 10 Max.