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2N5581 - NPN SILICON SWITCHING TRANSISTOR

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TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/423 Devices 2N5581 2N5582 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC PT Top, Tstg Value 50 75 6.0 800 0.5 2.0 -55 to +200 Unit Vdc Vdc Vdc mAdc W W 0 C www.DataSheet4U.com @ TA = 250C (1) @ TC = 250C (2) Operating & Storage Junction Temperature Range 1) Derate linearly 2.86 mW/0C for TA > 250C 2) Derate linearly 11.43 mW/0C for TC > 250C TO-46* (TO-206AB) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol V(BR)CEO ICBO Min. 50 10 10 10 10 Max.