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2N5682 - NPN POWER TRANSISTOR

Download the 2N5682 datasheet PDF. This datasheet also covers the 2N5681 variant, as both devices belong to the same npn power transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N5681_MicrosemiCorporation.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Microsemi (now Microchip Technology)

Part Number Description
2N5680 PNP POWER TRANSISTOR
2N5681 NPN POWER TRANSISTOR
2N5660 NPN POWER SILICON TRANSISTOR
2N5661 NPN POWER SILICON TRANSISTOR
2N5662 NPN POWER SILICON TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TECHNICAL DATA NPN POWER TRANSISTOR SILICON AMPLIFIER Qualified per MIL-PRF-19500/583 Devices 2N5681 2N5682 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS (TA = 25° C unless otherwise noted) 2N5681 Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Temperature Range VCEO VCBO VEBO IC IB PT Top, Tstg Symbol RθJC 100 100 4.0 1.0 0.5 1.0 10 -65 to +200 2N5682 120 120 4.0 1.0 0.5 1.0 10 -65 to +200 Units Vdc Vdc Vdc Adc Adc W W °C Unit 0 C www.DataSheet4U.com THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 5.7 mW/0C for TA > +250C 2) Derate linearly 57 mW/0C for TC > +250C Max. 17.