2N6341 Overview
@ TA = +250C @ TC = +1000C Operating & Storage Junction Temperature Range 6.0 10 25 200 112 -65 to +175 Max. IB = 1.0 Adc Turn-Off Time VCC = 80 Vdc; IB1 = IB2 = 1.0 Adc Storage Time VCC = 80 Vdc;.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | 2N6341 |
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| Datasheet | 2N6341 2N6338 Datasheet (PDF) |
| File Size | 75.64 KB |
| Manufacturer | Microsemi (now Microchip Technology) |
| Description | NPN POWER SILICON TRANSISTOR |
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@ TA = +250C @ TC = +1000C Operating & Storage Junction Temperature Range 6.0 10 25 200 112 -65 to +175 Max. IB = 1.0 Adc Turn-Off Time VCC = 80 Vdc; IB1 = IB2 = 1.0 Adc Storage Time VCC = 80 Vdc;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2N6341 | NPN High Power Silicon Transistor | VPT |
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2N6341 | NPN Transistor | Motorola |
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2N6341 | Silicon NPN Power Transistors | SavantIC |
| 2N6341 | High-Power NPN Silicon Transistors | ON Semiconductor |
See all Microsemi (now Microchip Technology) datasheets
| Part Number | Description |
|---|---|
| 2N6303 | Silicon PNP Power Transistors |
| 2N6304 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| 2N6306 | NPN POWER SILICON TRANSISTOR |
| 2N6308 | NPN POWER SILICON TRANSISTOR |
| 2N6338 | NPN POWER SILICON TRANSISTOR |
| 2N6350 | NPN DARLINGTON POWER SILICON TRANSISTOR |
| 2N6351 | NPN DARLINGTON POWER SILICON TRANSISTOR |
| 2N6352 | NPN DARLINGTON POWER SILICON TRANSISTOR |
| 2N6353 | NPN DARLINGTON POWER SILICON TRANSISTOR |
| 2N6383 | NPN DARLINGTON POWER SILICON TRANSISTOR |