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TECHNICAL DATA
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/312 Devices 2N708 Qualified Level JAN, JANTX
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage Total Power Dissipation
Symbol
VCEO VCBO VEBO VCER PT Top, Tstg
Value
15 40 5.0 20 0.36 1.2 -65 to +200
Units
Vdc Vdc Vdc Vdc W W 0 C
@ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range 1) Derate linearly 2.06 mW/0C for TA > 250C 2) Derate linearly 6.90 mW/0C for TC > 250C
TO-18 (TO-206AA)*
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol V(BR)CBO V(BR)EBO V(BR)CEO V(BR)CER ICBO IEBO Min. Max.