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TEMIC
Siliconix
N-Channel Enhancement-Mode lransistor
2N7085
Product Summary
V(BR)DSS (V) 100
rDS(on) (Q) 0.D75
ID (A) 20
TO·257AB Hermetic Package
o
Case Isolated GDS Top View
D
Go--J
S N-Channel MOSFET
Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)
Drain-Source Voltage Gate-Source Voltage
Parameter
Continuous Drain Current (TJ = 150'q
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Thmperature Range Lead Thmperature e116" from case for 10 sec.)
I Tc = 25'C I Tc = lOO'C
ITc=25'C ITc = 100'C
Symbol VDS VGS
ID IDM PD TJ,T,tg TL
Limit
100 ±20 20 12 80 60 20 -55 to 150 300
Unit V A W
'c
Thermal Resistance Ratings
Parameter Maximum Junction-to·Ambient Maximum Junction-to-Case Case-to-Sink
P-36736-Rev.