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TEMIC
Siliconix
P-Channel Enhancement-Mode Thansistor
Product Summary
V(BR)DSS (V) -100
rOS(on) (Q) 0.30
10 (A)
-10
TO-257AB
S
Hermetic Package
o
2N7089
Case Isolated
GD S ThpView
D P-Channel MOSFET
= Absolute Maximum Ratings (Tc 25°C Unless Otherwise Noted)
Drain-Source Voltage Gate-Source Voltage
Parameter
Continuous Drain Current (TJ = 150°C)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range Lead Thmperature (lh6" from case for 10 sec.)
I Tc=25°C ITc = 100°C
ITc =25°C I Tc=l00°C
Symbol
Vns Vos
In InM PD
TJ,T"g TL
limit
-100 ±20 -10 -6.7 -40 60 24 -55 to 150 300
Unit
V A W °C
Thermal Resistance Ratings
Parameter
Maximum Junction-ta-Ambient Maximum lunction-to-Case Case-to-Sink
P-36731-Rev.
2N7089 Datasheet
