The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TEMIC
Siliconix
N-Channel Enhancement-Mode Transistor
2N7081
Product Summary
V(BR)nSS (V) 100
rnS(on) (Q) 0.15
In (A) 13
TO-2S7AB Hermetic Package
o
Case Isolated
GD S ThpView
D
Go-l
S N-Channel MOSFET
Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)
Drain-Source Voltage Gate-Source Voltage
Parameter
Continuous Drain Current (TJ = 150"C)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Thmperature Range Lead Thmperature (lh6" from case for 10 sec.)
ITc=25"C ITc= 100"C
ITc=25"C ITc = 100"C
Symbol
VDS VGS
ID IDM
Po
TJ. Tstg TL
Limit
100 ±20 13 8.0 48 50 20 -55 to 150 300
Unit V
A W "C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient Maximum Junction-to-Case Case-to-Sink
P-36736-Rev.