TEMIC Semiconductors 2N7080
P-Channel Transistor
| Part No. | 2N7080 |
|---|---|
| Datasheet | 2N7080 Download |
| Manufacturer |  TEMIC Semiconductors |
| Description | P-Channel Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Tc 25°C Unless Otherwise Noted) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (TJ = 150'q Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Thmperature Range Lead Thmperature (lh6" from case for 10 sec.) I Tc = 25'C ITc = 100'C I Tc=25'C ITc= 100'C Symbol Vos VGS 10 10M Po TJ,Tstg TL Limit -200 ±20 -9.5 -6.1 -38 100 40 -55 to 150 300 Unit V -II) A ~==~~~ U~ W ~IO~ Z - 'C Thermal Resistance Ratings Parameter Maximum Junction-lo-Ambient Maximum Junction-to-Case Case-to-Sink P-37012-Rev. C (06/01/94) Symbol RthJA RthJC RthCS 'JYpical 0.2 Maximum 50 1.25 Uuit 'e/W 6-193 TEMIC 2N7080 Siliconix Specifications (TJ - 25°C Unless Otherwise Noted) Parameter Symbol Test Condition Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward 1tansconductanceb Dynatnic V(1IR)DSS VaS(tb) lass loss 10(on) roS(on) gl, Vas = 0 V, 10 = -250 JlA Vos - Vas.
