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TEMIC
Siliconix
P-Channel Enhancement-Mode Transistor
Product Summary
V(BR)OSS (V) -200
rOS(on) (Q) 0.500
10 (A) -9.5
TO-254AA
S
Hermetic Package
o
2N7080
Case Isolated
DSG
Top View
D P-Channel MOSFET
Absolute Maximum Ratings (Tc 25°C Unless Otherwise Noted)
Drain-Source Voltage Gate-Source Voltage
Parameter
Continuous Drain Current (TJ = 150'q
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Thmperature Range Lead Thmperature (lh6" from case for 10 sec.)
I Tc = 25'C ITc = 100'C
I Tc=25'C
ITc= 100'C
Symbol
Vos VGS
10 10M
Po TJ,Tstg
TL
Limit
-200 ±20 -9.5 -6.
2N7080 Datasheet
