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TEMIC
Siliconix
N-Channel Enhancement-Mode Transistor
Product Summary
V(BR)nSS (V) 200
rnS(on) (Q) 0.16
In (A)
14
TO-257AB
D
Hermetic Package
o
2N7086
Case Isolated
GD S TopV,ew
S N-Channel MOSFET
Absolute Maximum Ratings (Tc = 25°C Unless Othernise Noted)
Drain-Source Voltage Gate-Source Voltage
Parameter
Continuous Drain Current (TJ = IS0"C)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range Lead Thmperature (1116" from case for 10 sec.)
ITc=2S"C ITc = loo"C
ITc=25"C ITc= 100"C
Symbol
VDS VGS
ID IDM
Po
TJ. Tstg TL
Limit
200 ±20 14 8.5 56 60 23 -55 to 150 300
Unit
V A W "C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient Maximum Junction-to-Case Case-to-Sink
P-37012-Rev.
2N7086 Datasheet
