TEMIC Semiconductors 2N7086
N-Channel Transistor
| Part No. | 2N7086 |
|---|---|
| Datasheet | 2N7086 Download |
| Manufacturer |  TEMIC Semiconductors |
| Description | N-Channel Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Tc = 25°C Unless Othernise Noted) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (TJ = IS0"C) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Lead Thmperature (1116" from case for 10 sec.) ITc=2S"C ITc = loo"C ITc=25"C ITc= 100"C Symbol VDS VGS ID IDM Po TJ. Tstg TL Limit 200 ±20 14 8.5 56 60 23 -55 to 150 300 Unit V A W "C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case Case-to-Sink P-37012-Rev. B (06/01/94) Symbol RtbJA RtbJC RthCS 'JYpical 1.0 Maximum 80 2.1 Unit "CfW 6-205 TEMIC 2N7086 = Specifications (TJ 25°C Unless Otherwise Noted) Parameter Symbol Test Condition Min Static Drain-Source Breakdown Voltage V(BR)DSS VGS = Ov, 10 = 250 flA 200 Gate Threshold Voltage VGS(th) VOS = VGS, 10 = 250 flA 2.0 Gate-Body Leakage IGSS VOS= OV,VGS = ±20V Zero Gate Voltage Drain Current On-State Drain Currentb Vos = 160 V, VGS = OV loss Vos = 160 V, VGS...
