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TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/181 Devices 2N718A 2N1613 2N1613L Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C (1)
Symbol
VCEO VCBO VEBO IC
Value
30 75 7.0 500 0.5 0.8 1.8 3.0 -55 to +175 Max.
Unit
Vdc Vdc Vdc mAdc
TO-18 (TO-206AA)* 2N718A
2N718A 2N1613, L @ TC = +250C (2) 2N718A 2N1613, L Operating & Storage Junction Temperature Range
PT
W
TJ, Tstg Symbol
0
C
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case Unit
0 2N718A 97 C/W RθJC 2N1613, L 58 1) Derate linearly 4.57 mW/0C for 2N1613, L and 2.85 mW/0C for 2N718A for TA > +250C 2) Derate linearly 17.