LX5512B Datasheet | Microsemi

CRIPTION KEY Features - - - - - - - - - Advanced In Ga P HBT 2.4-2.5GHz Operation Single-Polarity 3.3V Supply Low Quiescent Current ICQ ~65m A Power Gain ~ 32 d B at 2.45GHz & Pout=19d Bm Total Current ~140m A for Pout=19d Bm at 2.45 GHz OFDM EVM ~3 % for 64QAM/ 54Mbps & Pout=19d Bm Small Footprint: 3x3mm2 Low Profile: 0.9mm APPLICATIONS The LX5512B is a power amplifier optimized for WLAN applications in the 2.4-2.5 GHz frequency range. The PA is implemented as a threestage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching. The device is manufactured with an In Ga P/Ga As Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates at a single low voltage supply of 3.3V with 32 d B power gain between 2.4-2.5GHz, at a low quiescent current of 65m A. For 19d Bm OFDM output power (64QAM, 54Mbps), the PA provides a low EVM (Error-Vector Magnitude) of 3%, and consumes 140m A total DC current. The LX5512B is available in a 16pin 3mmx3mm micro-lead package (MLP). The pact footprint, low profile, and excellent thermal capability of LX5512B meets the requirements of high-gain power amplifiers for IEEE 802.11b/g applications. . Microsemi . C OM IMPORTANT: For the most current data, consult MICROSEMI’s website: http://.microsemi. - IEEE 802.11b/g PRODUCT HIGHLIGHT PACKAGE ORDER INFO Plastic MLPQ 16 pin LX5512BLQ Note: Available in Tape & Reel. Append the letters “TR” to the part number. (i.e. LX5512BLQTR) This device is classified as ESD Level 0 in accordance with JESD22-A114-B, (HBM) testing. Appropriate ESD procedures should be observed when handling this device. Copyright © 2004 Rev. 1.0, 2004-06-23 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 TM ® In Ga P HBT 2.4 - 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET ABSOLUTE MAXIMUM RATINGS DC Supply Voltage, RF off..............................................................