• Part: LX5514
  • Description: InGaP HBT 2.3 - 2.5 GHz Power Amplifier
  • Manufacturer: Microsemi
  • Size: 86.72 KB
Download LX5514 Datasheet PDF
Microsemi
LX5514
LX5514 is InGaP HBT 2.3 - 2.5 GHz Power Amplifier manufactured by Microsemi.
CRIPTION The LX5514 is a power amplifier For 20d Bm OFDM output power optimized for WLAN applications in (64QAM, 54Mbps), the PA provides a the 2.3 - 2.5GHz frequency range. low EVM (Error-Vector Magnitude) of The power amplifier is implemented 3.0%, and consumes 150m A total DC as a two-stage monolithic microwave current. integrated circuit (MMIC) with active The LX5514 is available in a bias and output pre-matching. standard 12-pin 2mm x 2mm micro- The device is manufactured with an lead package (MLP12L). The pact In Ga P/Ga As Heterojunction Bipolar footprint, low profile, and thermal Transistor (HBT) IC process capability of the MLP package make the (MOCVD). Power gain of 28d B is LX5514 an ideal solution for medium- obtained with a low quiescent current gain power amplifier requirements for of 80m A. IEEE 802.11b/g applications. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://.microsemi. KEY Features - Advanced In Ga P HBT - 2.3 - 2.5GHz Operation - Single-Polarity 3.3V Supply - Quiescent Current 80m A - Power Gain 28d B - Total Current 150m A for POUT=20d Bm OFDM - EVM ~3 % 54Mbps / 64QAM - Small Footprint: 2 x 2mm - Low Profile: 0.46mm APPLICATIONS - IEEE 802.11b/g PRODUCT HIGHLIGHT PACKAGE ORDER INFO Plastic MLPQ 12 pin Ro HS pliant / Pb-free LX5514LL Note: Available in Tape & Reel. Append the letters “TR” to the part number. (i.e....