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LX5514 - InGaP HBT 2.3 - 2.5 GHz Power Amplifier

General Description

The LX5514 is a power amplifier For 20dBm OFDM output power optimized for WLAN applications in (64QAM, 54Mbps), the PA provides a the 2.3

2.5GHz frequency range.

Key Features

  • Advanced InGaP HBT.
  • 2.3.
  • 2.5GHz Operation.
  • Single-Polarity 3.3V Supply.
  • Quiescent Current 80mA.
  • Power Gain 28dB.
  • Total Current 150mA for POUT=20dBm OFDM.
  • EVM ~3 % 54Mbps / 64QAM.
  • Small Footprint: 2 x 2mm.
  • Low Profile: 0.46mm.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WWW.Microsemi .COM LX5514 TM ® InGaP HBT 2.3 – 2.5 GHz Power Amplifier PRODUCTION DATA SHEET DESCRIPTION The LX5514 is a power amplifier For 20dBm OFDM output power optimized for WLAN applications in (64QAM, 54Mbps), the PA provides a the 2.3 – 2.5GHz frequency range. low EVM (Error-Vector Magnitude) of The power amplifier is implemented 3.0%, and consumes 150mA total DC as a two-stage monolithic microwave current. integrated circuit (MMIC) with active The LX5514 is available in a bias and output pre-matching. standard 12-pin 2mm x 2mm micro- The device is manufactured with an lead package (MLP12L). The compact InGaP/GaAs Heterojunction Bipolar footprint, low profile, and thermal Transistor (HBT) IC process capability of the MLP package make the (MOCVD).