LX5512E Datasheet | Microsemi

CRIPTION KEY Features - - - - - - - - - Advanced In Ga P HBT 2.4 - 2.5GHz Operation Single-Polarity 3.3V Supply Low Quiescent Current Icq ~50m A Power Gain ~34d B @ 2.45GHz and Pout = 19d Bm Total Current 130m A for Pout = 19d Bm @ 2.45GHz OFDM EVM ~ 3.0% for 64QAM / 54Mbps and Pout = 19d Bm Small Footprint (3 x 3 mm2) Low Profile (0.9mm) APPLICATIONS The LX5512E is a power amplifier optimized for WLAN applications in the 2.4-2.5 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching. The device is manufactured with an In Ga P/Ga As Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates at a single low voltage supply of 3.3V with 34 d B power gain between 2.4-2.5GHz, at a low quiescent current of 50 m A. For 19d Bm OFDM output power (64QAM, 54Mbps), the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 m A total DC current. The LX5512E is available in a 16-pin 3mmx3mm micro-lead package (MLP). The pact footprint, low profile, and excellent thermal capability of the MLP package makes the LX5512E an ideal solution for high-gain power amplifier requirements for IEEE 802.11b/g applications. . Microsemi . C OM IMPORTANT: For the most current data, consult MICROSEMI’s website: http://.microsemi. - IEEE 802.11b/g PRODUCT HIGHLIGHT PACKAGE ORDER INFO LQ 16 pin Plastic MLPQ LX5512E-LQ Note: Available in Tape & Reel. Append the letter “T” to the part number. (i.e. LX5512E-LQT) Copyright  2000 Rev. 1.2, 2004-01-16 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 TM ® In Ga P HBT 2.4 - 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET ABSOLUTE MAXIMUM RATINGS PACKAGE PIN...