LX5512E datasheet by Microsemi (now Microchip Technology).
| Part number | LX5512E |
|---|---|
| Datasheet | LX5512E_MicrosemiCorporation.pdf |
| File Size | 249.65 KB |
| Manufacturer | Microsemi (now Microchip Technology) |
| Description | Power Amplifier |
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The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates at a single low voltage supply of 3.3V with 34 dB power gain between 2.4-2.5GHz, at a low quiescent current of 50 mA.
View all Microsemi (now Microchip Technology) datasheets
| Part Number | Description |
|---|---|
| LX5512B | Power Amplifier |
| LX5510 | InGaP HBT 2.4-2.5 GHz Power Amplifier |
| LX5514 | InGaP HBT 2.3 - 2.5 GHz Power Amplifier |
| LX5501A | InGAP HBT Gain Block |
| LX5503 | InGaP HBT 5-6GHz Power Amplifier |
| LX5503E | InGaP HBT 4 - 6GHz Power Amplifier |
| LX5506 | InGaP HBT 4.5 - 6GHz Power Amplifier |
| LX5506B | InGaP HBT 4 6GHz Power Amplifier |
| LX5506E | InGaP HBT 4 - 6GHz Power Amplifier |
| LX5506M | InGaP HBT 4.5 - 6GHz Power Amplifier |
