LX5512E Description
The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates at a single low voltage supply of 3.3V with 34 dB power gain between 2.4-2.5GHz, at a low quiescent current of 50 mA.
LX5512E Key Features
- Advanced InGaP HBT 2.4