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1214GN-120E - 120W L-Band Radar GaN Power Transistor and Pallet Amplifier

Features

  • 8 3 Electrical Specifications 9 3.1 Absolute Maximum Ratings 9 3.2 Electrical Characteristics at 25 °C 9 3.3 Functional Characteristics at 25 °C 9 3.4 Typical Broadband Performance Data (300 µS, 10% Pulsing) 10 3.5 Critical Performance at PIN = 4 W (34 dBm) 11 4 Transistor Impedance Information.

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1214GN-120E/EL/EP Datasheet 120W L-Band Radar GaN Power Transistor and Pallet Amplifier 120W L-Band Radar GaN Power Transistor and Pallet Amplifier Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications.
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