Microsemi 2N3766
NPN POWER SILICON TRANSISTOR
| Part No. | 2N3766 |
|---|---|
| Datasheet | 2N3766 Download |
| Manufacturer |  Microsemi |
| Description | NPN POWER SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = +250C (1) Operating & Storage Temperature Range Symbol VCEO VCBO VEBO IB IC PT Top, Tstg 2N3766 60 80 6.0 2.0 4.0 25 2N3767 80 100 Units Vdc Vdc Vdc Adc Adc W 0 -65 to +200 Max. 7.0 C THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance, Junction-to-Case RθJC 1) Derate linearly 143 mW/0C between TC = +250C and TC = +2000C Unit 0 C/W TO-66* (TO-213AA) *See Appendix A for Package OutlineELECTRICAL CHARACTERISTICS
(TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc Collector-Emitter Cutoff Current VCE = 60 Vdc VCE = 80 Vdc Collector-Emitter Cutoff Current VCE = 80 Vdc, VBE = 1.5 Vdc VCE = 100 Vdc, VBE = 1.5 Vdc Collector-Base Cutoff Current VCB = 80 Vdc VCB = 100 Vdc Emitter-Base Cutoff Current VEB = 6.0 Vdc 2N3766 2N3767 2N3766 2N3...
