Microsemi 2N3771
NPN HIGH POWER SILICON TRANSISTOR
| Part No. | 2N3771 |
|---|---|
| Datasheet | 2N3771 Download |
| Manufacturer |  Microsemi |
| Description | NPN HIGH POWER SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IB IC PT TJ, Tstg 2N3771 40 50 7.0 7.5 30 2N3772 60 100 7.0 5.0 20 Unit Vdc Vdc Vdc Adc Adc W W 0 C @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range 1) Derate linearly 34.2 mW/0C for TA > +250C 2) Derate linearly 857 mW/0C for TC > +250C 6.0 150 -65 to +200 TO-3* (TO-204AA) *See Appendix A for Package OutlineELECTRICAL CHARACTERISTICS
(TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC = 200 mAdc Collector-Emitter Breakdown Voltage IC = 200 mAdc, RBE = 100 Ω Collector-Emitter Breakdown Voltage IC = 200 mAdc, VBE = -1.5 Vdc Collector-Emitter Cutoff Current VCE = 30 Vdc VCE = 50 Vdc Emitter-Base Cutoff Current VBE = 7.0 Vdc Collector-Emitter Cutoff Current VBE = 1.5 Vdc, VCE = 50 Vdc VBE = 1.5 Vdc, VCE = 100 Vdc...