Microsemi 2N4399
PNP HIGH POWER SILICON TRANSISTOR
| Part No. | 2N4399 |
|---|---|
| Datasheet | 2N4399 Download |
| Manufacturer |  Microsemi |
| Description | PNP HIGH POWER SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IB IC PT TJ, Tstg Symbol RθJC RθJA 2N4399 60 60 5.0 7.5 30 2N5745 80 80 Unit Vdc Vdc Vdc Adc Adc W W 0 C Unit 0 @ TA =+ 250C (1) @ TC = +1000C (2) Operating & Storage Junction Temperature Range 20 5.0 115 -55 to +200 Max. 3 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Junction-to-Ambient 1) 0.875 35 TO-3* (TO-204AA) C/W 2) Derate linearly @ 28.57 mW/0C for TA > +250C Derate linearly @ 1.15 W/0C for TC > +1000C *See appendix A for package outlineELECTRICAL CHARACTERISTICS
(TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc Collector-Emitter Cutoff Current VCE = 60 Vdc VCE = 80 Vdc Collector-Emitter Cutoff Current VCE = 60 Vdc, VBE = 1.5 Vdc VCE = 80 Vdc, VBE = 1.5 Vdc Emitter-Base Cutoff Current V...