Microsemi 2N5671
NPN HIGH POWER SILICON TRANSISTOR
| Part No. | 2N5671 |
|---|---|
| Datasheet | 2N5671 Download |
| Manufacturer |  Microsemi |
| Description | NPN HIGH POWER SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IB IC PT Top, Tstg Symbol RθJC 2N5671 90 120 2N5672 120 150 Unit Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Temperature Range 7.0 10 30 6.0 140 -65 to +200 Max. 1.25 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 34.2 mW/0C for TA > +250C 2) Derate linearly 800 mW/0C for TC > +250C 0 TO-3* (TO-204AA) *See appendix A for package outlineELECTRICAL CHARACTERISTICS
(TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc Collector-Emitter Breakdown Voltage IC = 200 mAdc Collector-Emitter Breakdown Voltage IC = 200 mAdc Collector-Emitter Cutoff Current VCE = 80 Vdc Collector-Emitter Cutoff Current VCE = 110 Vdc, VBE = 1.5 Vdc VCE = 135 Vdc, V...