Datasheet Summary
TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/488 Devices 2N5671 2N5672 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation
Symbol
VCEO VCBO VEBO IB IC PT Top, Tstg Symbol RθJC
.DataSheet.net/
90 120
2N5672
120 150
Unit
Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W
@ TA = +250C (1) @ TC = +250C (2) Operating & Storage Temperature Range
7.0 10 30 6.0 140 -65 to +200 Max. 1.25
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 34.2 mW/0C for TA > +250C 2) Derate linearly 800 mW/0C...
