Microsemi 2N7371
PNP DARLINGTON HIGH POWER SILICON TRANSISTOR
| Part No. | 2N7371 |
|---|---|
| Datasheet | 2N7371 Download |
| Manufacturer |  Microsemi |
| Description | PNP DARLINGTON HIGH POWER SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = +250C (1) Operating & Storage Junction Temperature Range Symbol VCEO VCBO VEBO IB IC PT TJ, Tstg Symbol RθJC Value 100 100 5.0 0.2 12 100 -65 to +175 Max. 1.5 Units Vdc Vdc Vdc Adc Adc W 0 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 0 Unit C/W TO-254AA* 1) Derate linearly 0.667 W/0C above TC > +250C *See Appendix A for package outlineELECTRICAL CHARACTERISTICS
(TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc Collector-Emitter Cutoff Current VCE = 50 Vdc Collector-Emitter Cutoff Current VCE = 100 Vdc, VBE = 1.5 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc VCEO(sus) ICEO ICEX IEBO 100 1.0 0.5 2.0 Vdc mAdc mAdc mAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N7371 JAN SERIESELECTRICAL CHARACTERISTICS
(con’t) Characteristics Symbol Min.