Microsemi 2N7372
This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. These devices have excellent unclamped and clamped reverse energy ratings with the base to emitter reversed biased.| Part No. | 2N7372 |
|---|---|
| Datasheet | 2N7372 Download |
| Manufacturer |  Microsemi |
| Description | Complimentary Power Transistors |
| Buy | Stock & Price |
APPLICATIONS
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● 2N7372 - PNP 2N7373 - NPN
● Power Supply Inverters and Converters General Purpose Amplifiers
FEATURES
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● Planar Process for Reliability Fast Switching High-Frequency Power Transistors For Complementary Use with Each Other 15 mj Reverse Energy Rating with IC = 10MA and 4 V Reverse Bias Similar to 2N5004 and 2N5005 but JEDEC TO-254AA Package Leads can be Formed All Terminals Isolated from the Case Complimentary Power Transistors in Hermetic Isolated TO-254AA Packages JAN/TX/TXV/JANS
DESCRIPTION
: These power transistors are produced by PPC's MULTIPLE DIFFUSED PLANAR process. Ultrasonically bonded wire leads and gold eutectic die bonding are utilized to permit operating temperature to 200° C. The hermetically sealed package insures maximum reliability and long life. The isolated low profile package allows for easy PC board fit. TO-254AAABSOLUTE MAXIMUM RATINGS
: SYMBOL VCBO VCEO VEBO IC IC IB T STG TJ CHARACTERISTIC Collector-Base Voltage Collector-Emitter V...
