APTC60TAM24TPG Datasheet | Microsemi

Features - - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration Internal thermistor for temperature monitoring - - - - These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on .microsemi. .microsemi. 1- 6 - Rev 0 Benefits - Outstanding performance at high frequency operation VBUS 1 VBUS 2 VBUS 3 - Direct mounting to heatsink (isolated package) G1 G3 G5 - Low junction to case thermal resistance S1 S3 S5 0/VBUS 2 0/VBUS 3 0/VBUS 1 - Solderable terminals both for power and signal for S6 S4 S2 easy PCB mounting G6 G4 G2 - Very low (12mm) profile - Each leg can be easily paralleled to achieve a phase U V W leg of three times the current capability - Module can be configured as a three phase bridge - Module can be configured as a boost followed by a full bridge - Ro HS pliant Absolute maximum ratings Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 600 V Tc = 25°C 95 ID Continuous Drain Current A Tc = 80°C 70 IDM Pulsed Drain current 260 VGS Gate - Source Voltage ±20 V RDSon Drain - Source ON Resistance 24 mΩ .. PD Maximum Power Dissipation Tc = 25°C 462 W IAR Avalanche current (repetitive and non repetitive) 15 A EAR Repetitive Avalanche Energy 3 m J EAS Single Pulse Avalanche Energy 1900 NTC1 NTC2 August, 2009 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Tj = 25°C Tj = 125°C 2.1 Typ VGS = 10V, ID = 47.5A VGS = VDS, ID = 5m A VGS = ±20 V, VDS = 0V Max 350 600 24 3.9 200 Unit µA mΩ V n...