Power MOS 7® MOSFETs
- Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated
Q2 G2 S2
0 /V BU S NT C1.
Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF.
Kelvin source for easy drive.
Very low stray inductance
- Symmetrical design - Lead frames for power connections.
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APTM100A23SCTG
Phase leg
Series & SiC parallel diodes
MOSFET Power Module
VDSS = 1000V RDSon = 230mΩ typ @ Tj = 25°C ID = 36A @ Tc = 25°C
VBUS
NT C2
Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies
Q1 G1 S1
OUT
Features • Power MOS 7® MOSFETs
- Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated
Q2 G2 S2
0 /V BU S NT C1
• Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF
• Kelvin source for easy drive • Very low stray inductance
- Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration
VBUS
S1 G1
0/VBUS
S2 G2
OUT
APTM100A23SCTG Datasheet
