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GC4510 - High Voltage NIP Diodes

General Description

The GC4500 series are high voltage, high power (anode base) NIP diodes.

These high resistivity silicon devices are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device hours in high reliability systems.

Key Features

  • Available as packaged devices or as chips for hybrid.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.MICROSEMI.com TM ® DESCRIPTION The GC4500 series are high voltage, high power (anode base) NIP diodes. These high resistivity silicon devices are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device hours in high reliability systems. These devices can withstand storage temperatures from -65°C to +200°C and will operate over the range from -55° to +150°C. All devices meet or exceed military environmental specifications of MIL-PRF-19500. The NIP diode is used when negative bias current is available for forward conduction and will operate typically with -50 mA bias. Breakdown voltages are available up to 500 volts. (Higher voltages available on request. Consult factory for details.