This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | GC4512 |
|---|---|
| Datasheet | GC4512 GC4510 Datasheet (PDF) |
| File Size | 162.31 KB |
| Manufacturer | Microsemi (now Microchip Technology) |
| Description | High Voltage NIP Diodes |
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The GC4500 series are high voltage, high power (anode base) NIP diodes. These high resistivity silicon devices are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device hours in high reliability systems. These devices can withstand storage temperatures from -65°C to +200°C and will operate over the range from -55° to +150°C.
See all Microsemi (now Microchip Technology) datasheets
| Part Number | Description |
|---|---|
| GC4510 | High Voltage NIP Diodes |
| GC4511 | High Voltage NIP Diodes |
| GC4513 | High Voltage NIP Diodes |
| GC4530 | High Voltage NIP Diodes |
| GC4531 | High Voltage NIP Diodes |
| GC4532 | High Voltage NIP Diodes |
| GC4533 | High Voltage NIP Diodes |
| GC4210 | HIGH SPEED PIN DIODES |
| GC4211 | HIGH SPEED PIN DIODES |
| GC4212 | HIGH SPEED PIN DIODES |
