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MRF581G - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

This page provides the datasheet information for the MRF581G, a member of the MRF581 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS family.

Description

Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.

Features

  • Low Noise - 2.5 dB @ 500 MHZ.
  • Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz.
  • Ftau - 5.0 GHz @ 10v, 75mA.
  • Cost Effective MacroX Package Macro X.

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Full PDF Text Transcription

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RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF581 MRF581G MRF581A MRF581AG *G Denotes RoHS Compliant, Pb free Terminal Finish Features • Low Noise - 2.5 dB @ 500 MHZ • Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective MacroX Package Macro X DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current MRF581 MRF581A 18 15 30 2.
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