MRF581AG
MRF581AG is RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS manufactured by Microsemi.
- Part of the MRF581 comparator family.
- Part of the MRF581 comparator family.
Features
- Low Noise
- 2.5 d B @ 500 MHZ
- Gain at Optimum Noise Figure = 15.5 d B @ 500 MHz
- Ftau
- 5.0 GHz @ 10v, 75m A
- Cost Effective Macro X Package
Macro X
DESCRIPTION
: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
MRF581 MRF581A 18 15 30 2.5 200
Unit Vdc Vdc Vdc m A
Thermal Data
Tstg
Total Device Dissipation @ TC = 50ºC Derate above 50ºC
Total Device Dissipation @ TC = 25ºC Derate above 25ºC
Storage Junction Temperature Range
TJmax
Maximum Junction Temperature
Revision A- December 2008
2.5 25 1.25 10
-65 to +150
Microsemi reserves the right to change, without notice, the specifications and information contained...
