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MRF581AG - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Download the MRF581AG datasheet PDF. This datasheet also covers the MRF581 variant, as both devices belong to the same rf & microwave discrete low power transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.

Key Features

  • Low Noise - 2.5 dB @ 500 MHZ.
  • Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz.
  • Ftau - 5.0 GHz @ 10v, 75mA.
  • Cost Effective MacroX Package Macro X.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF581-Microsemi.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Microsemi (now Microchip Technology)

Part Number Description
MRF581A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF581 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF581G RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF555 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF581 MRF581G MRF581A MRF581AG *G Denotes RoHS Compliant, Pb free Terminal Finish Features • Low Noise - 2.5 dB @ 500 MHZ • Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective MacroX Package Macro X DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current MRF581 MRF581A 18 15 30 2.