MRF581A Datasheet | Advanced Power Technology

Features - - - - Low Noise - 2.5 d B @ 500 MHZ Gain at Optimum Noise Figure = 15.5 d B @ 500 MHz Ftau - 5.0 GHz @ 10v, 75m A Cost Effective Macro X Package Macro X DESCRIPTION : Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current MRF581 18 30 2.5 200 MRF581A 15 Unit Vdc Vdc Vdc m A Thermal Data D D Total Device Dissipation @ TC = 50º C Derate above 50º C Total Device Dissipation @ TC = 25º C Derate above 25º C Storage Junction Temperature Range -65 to +150 Maximum Junction Temperature 150 ºC ºC 2.5 25 1.25 10 Watts m W/ º C Watts m W/ º C Tstg TJmax Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at .ADVANCEDPOWER. or contact our factory direct. .. MRF581/MRF581A ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO IEBO Test Conditions Collector-Emitter Breakdown Voltage (IC = 5.0 m Adc, IB = 0) Collector-Base Breakdown Voltage (IC = 1.0 m Adc, IE = 0) Emitter-Base Breakdown Voltage (IE = 0.1 m Adc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, VBE = 0 Vdc) Emitter Cutoff Current (VCE = 2.0 Vdc, VBE = 0 Vdc) MRF581 MRF581A Value Min. 18 15 30 2.5 Typ. Max. 0.1 0.1 Unit Vdc Vdc Vdc m A m A (on) HFE DC Current Gain (IC = 50 m Adc, VCE = 5.0 Vdc) MRF581 MRF581A 50 90 200 250 - DYNAMIC Symbol COB Ftau Test Conditions Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Current-Gain Bandwidth Product (IC = 75 m Adc, VCE = 10 Vdc, f = 1.0 GHz) Value Min. Typ. 2.0 5.0 Max. 3.0 Unit p F GHz Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at .ADVANCEDPOWER. or contact our factory direct. MRF581/MRF581A FUNCTIONAL Symbol NFmin Test Conditions Minimum Noise Figure (IC =...