ASI MRF581
The MRF581 is Designed for High current low Power Amplifier Applications up to 1.0 GHz.| Part No. | MRF581 |
|---|---|
| Datasheet | MRF581 Download |
| Manufacturer |  ASI |
| Description | NPN SILICON RF TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
: PACKAGE STYLE Dim. Are in mmFEATURES
:● Low Noise Figure
● Low Intermodulation Distortion
● High Gain
● Omnigold™ Metalization System
MAXIMUM RATINGS
IC 200 mA VCBO 36 V VCEO 18 V VEBO 2.5 V PDISS 2.5 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C Leads 1 and 3 = Emitter 2 = Collector 4 = Base CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS BVCBO IC = 1.0 mA BVCEO IC = 1.0 mA BVEBO IE = 100 µA IEBO VEB = 2.0 V ICBO VCB = 15 V hFE VCE = 5.0 V IC = 50 mA MINIMUM TYPICAL MAXIMUM 36 18 2.5 100 100 50 200 UNITS V V V µA µA --- Ccb VCB = 10 V f = 1.0 MHz 1.4 2.0 pF GP VCC = 10 V IC = 50 f = 0.5 GHz 13 15.5 dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE● NORTH HOLLYWOOD, CA 91605
● (818) 982-1200
● FAX (818) 765-3004 Specifications are subject to cha