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MRF581 - NPN SILICON RF TRANSISTOR

Description

High current low Power Amplifier Applications up to 1.0 GHz.

Dim.

Features

  • Low Noise Figure.
  • Low Intermodulation Distortion.
  • High Gain.
  • Omnigold™ Metalization System.

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Datasheet preview – MRF581

Datasheet Details

Part number MRF581
Manufacturer ASI
File Size 26.57 KB
Description NPN SILICON RF TRANSISTOR
Datasheet download datasheet MRF581 Datasheet
Additional preview pages of the MRF581 datasheet.

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Full PDF Text Transcription

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MRF581 NPN SILICON RF TRANSISTOR DESCRIPTION: The MRF581 is Designed for High current low Power Amplifier Applications up to 1.0 GHz. PACKAGE STYLE Dim. Are in mm FEATURES: • Low Noise Figure • Low Intermodulation Distortion • High Gain • Omnigold™ Metalization System MAXIMUM RATINGS IC 200 mA VCBO 36 V VCEO 18 V VEBO 2.5 V PDISS 2.5 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C Leads 1 and 3 = Emitter 2 = Collector 4 = Base CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS BVCBO IC = 1.0 mA BVCEO IC = 1.0 mA BVEBO IE = 100 µA IEBO VEB = 2.0 V ICBO VCB = 15 V hFE VCE = 5.0 V IC = 50 mA MINIMUM TYPICAL MAXIMUM 36 18 2.5 100 100 50 200 UNITS V V V µA µA --- Ccb VCB = 10 V f = 1.0 MHz 1.4 2.0 pF GP VCC = 10 V IC = 50 f = 0.
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