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MRF581 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

General Description

Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.

Key Features

  • Low Noise - 2.5 dB @ 500 MHZ.
  • Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz.
  • Ftau - 5.0 GHz @ 10v, 75mA.
  • Cost Effective MacroX Package Macro X.

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Other Datasheets by Microsemi (now Microchip Technology)

Part Number Description
MRF581A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF581AG RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF581G RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF555 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF581 MRF581G MRF581A MRF581AG *G Denotes RoHS Compliant, Pb free Terminal Finish Features • Low Noise - 2.5 dB @ 500 MHZ • Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective MacroX Package Macro X DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current MRF581 MRF581A 18 15 30 2.