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MRF581 - RF and Microwave Discrete Low Power Power Transistors

Description

Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.

Features

  • Low Noise - 2.5 dB @ 500 MHZ Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective MacroX Package Macro X.

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Datasheet preview – MRF581

Datasheet Details

Part number MRF581
Manufacturer Advanced Power Technology
File Size 265.54 KB
Description RF and Microwave Discrete Low Power Power Transistors
Datasheet download datasheet MRF581 Datasheet
Additional preview pages of the MRF581 datasheet.

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Full PDF Text Transcription

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF581/MRF581A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Low Noise - 2.5 dB @ 500 MHZ Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective MacroX Package Macro X DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current MRF581 18 30 2.
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