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MSC010SDA170B - Zero Recovery Silicon Carbide Schottky Diode

Key Features

  • The following are key features of the MSC010SDA170B device:.
  • No reverse recovery.
  • Low forward voltage.
  • Low leakage current.
  • Avalanche energy rated.
  • RoHS compliant Benefits The following are benefits of the MSC010SDA170B device:.
  • High switching frequency.
  • Low switching losses.
  • Low noise (EMI) switching.
  • Higher reliability systems.
  • Increased system power density.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSC010SDA170B Zero Recovery Silicon Carbide Schottky Diode Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. The MSC010SDA170B device is a 1700 V, 10 A SiC SBD in a TO-247 package.