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MX043 - RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Microsemi

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MX043 RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET by Microsemi - Datasheet Preview — Datasheet preview – MX043

Datasheet Details

Part number	MX043
Manufacturer	Microsemi
File Size	183.11 KB
Description	RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	MX043 Datasheet
Additional preview pages of the MX043 datasheet.

Product details

Description

SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS PD Tj Tstg IS ISM θJC MAX.

Features

Harris FSC260R die total dose: 100 kRAD(Si) within pre-radiation parameter limits dose rate: 3 x 109 RAD(Si)/sec @ 80%BVDSS typical dose rate: 2 x 1012 RAD(Si)/sec @ ID ≤ IDM typical neutron: 1013 neutrons/cm2 within pre-radiation parameter limits photocurrent: 17 nA/RAD(Si)/sec typical rated Safe Operating Area Curve for Single event Effects rugged polysilicon gate cell structure with u.

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Published: May 3, 2005 |