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MX043 Datasheet Radiation Hardened Segr-resistant N-channel Enhancement Mode Power MOSFET

Manufacturer: Microsemi (now Microchip Technology)

Overview: 2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MX043J MX043G 200 Volts 44 Amps 50.

General Description

Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25° C RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS PD Tj Tstg IS ISM θJC MAX.

200 200 +/-20 +/-30 44 28 132 44 tbd tbd 300 -55 to +125 -55 to +125 44 132 0.25 UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ Watts ° C ° C Amps Amps ° C/W grams VDSmax 200V 200V 160V 100V 40V Drain-to-Gate Breakdown Voltage @ TJ ≥ Continuous Gate-to-Source Voltage Transient Gate-to-Source Voltage Continuous Drain Current 25° C, RGS= 1 MΩ Tj= 25° C Tj= 100° C Peak Drain Current, pulse width limited by TJmax Repetitive Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy Power Dissipation Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Thermal Resistance, Junction to Case Weight SINGLE EVENT EFFECTS SAFE OPERATING AREA (SEESOA) Ion Species Ni Br Br Br Br typical LET (MeV/mg/cm) 26 37 37 37 37 Notes (1) (2) typical range (µ) 43 36 36 36 36 VGS -20V -5V -10V -15V -20V Pulse test, t ≤ 300 µ s, duty cycle δ≤ 2% Microsemi Corp.

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Key Features

  • Harris FSC260R die total dose: 100 kRAD(Si) within pre-radiation parameter limits dose rate: 3 x 109 RAD(Si)/sec @ 80%BVDSS typical dose rate: 2 x 1012 RAD(Si)/sec @ ID ≤ IDM typical neutron: 1013 neutrons/cm2 within pre-radiation parameter limits photocurrent: 17 nA/RAD(Si)/sec typical rated Safe Operating Area Curve for Single event Effects rugged polysilicon gate cell structure with u.

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MX043 Distributor