Datasheet Details
| Part number | MX043G |
|---|---|
| Manufacturer | Microsemi (now Microchip Technology) |
| File Size | 183.11 KB |
| Description | RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
 MX043G Datasheet
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General Description
SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS PD Tj Tstg IS ISM θJC MAX.
Key Features
- Harris FSC260R die total dose: 100 kRAD(Si) within pre-radiation parameter limits dose rate: 3 x 109 RAD(Si)/sec @ 80%BVDSS typical dose rate: 2 x 1012 RAD(Si)/sec @ ID ≤ IDM typical neutron: 1013 neutrons/cm2 within pre-radiation parameter limits photocurrent: 17 nA/RAD(Si)/sec typical rated Safe Operating Area Curve for Single event Effects rugged polysilicon gate cell structure with u.